Robust, high-performance n-type organic semiconductors

Photoconductive Properties of Novel High- Performance Organic Semiconductors

π-Core tailoring for new high performance thieno(bis)imide based n-type molecular semiconductors.

The synthesis and characterization of two thieno(bis)imide based n-type semiconductors with electron mobilities of up to 0.3 cm(2) V(-1) s(-1) are described. The relationships between the electronic features of the π-inner core and the functional properties of the new materials are also discussed.

High Performance Organic Semiconductors with High Field-Effect Mobilities and Low Contact Resistances for Flexible Displays

We have succeeded in developing high-performance ptype of organic semiconductors with phenylethynyl groups, which have high filed-effect mobilities (> 3 cm2V−1s−1) by improving molecular planarity. A single crystal of the organic semiconductors has a herringbone structure. It plays an important role for carrier transport. In addition, we found that they had lower contact resistances to Au elect...

Organic Semiconductors

History With the invention of the transistor around the middle of the last century, inorganic semiconductors such as Si or Ge began to take over the role as the dominant material in electronics from the previously dominant metals. At the same time, the replacement of vacuum tube based electronics by solid state devices initiated a development which by the end of the 20th century has lead to the...

Naphthoylene(trifluoromethylbenzimidazole)-dicarboxylic acid imides for high-performance n-type organic field-effect transistors.

1,8-Naphthoylene(trifluoromethylbenzimidazole)-4,5-dicarboxylic acid imide (NTFBII) derivatives were synthesized. The OFET devices based on these new materials showed typical n-type OFET behavior and achieved an electron mobility as high as 0.10 cm(2) V(-1) s(-1) with good bias stress stability.